- Email:
- hamac@iu.edu
- Website:
- https://www.huseyinamac.com/
- Department:
- Intelligent Systems Engineering
Bio
Huseyin Amac is an Intelligence Systems Engineering undergraduate student at Indiana University, specializing in the characterization of Single Event Effects (SEE) at IU CREATE. Modeling of radiation-induced charge deposition and transient propagation is conducted using SPICE simulations, specifically targeting Single Event Transients (SET) and Upsets (SEU). Direct field experience includes a 25-hour heavy-ion experiment at the Lawrence Berkeley National Laboratory’s 88-inch Cyclotron.
SimPlot, a Python-based GUI tool, was developed to automate the extraction of pulse width and cross-section versus Linear Energy Transfer (LET). Additional research involves Geant4 Monte Carlo simulations to map Bragg Peak profiles and characterize energy deposition in silicon. The primary objective of these efforts is the advancement of radiation-hardened-by-design (RHBD) methodologies to ensure hardware reliability in extreme and mission-critical environments
Engagement with the semiconductor industrial base includes work as a Microelectronics Policy Fellow, focusing on national strategy and innovation governance. Academic leadership is maintained as a Student Success Mentor for the SPARC team, utilizing data-driven strategies to support the engineering student body.
Research
SimPlot
SimPlot is an Python-based GUI tool designed to automate the characterization of Single Event Transient (SET) vulnerability. The tool facilitates the processing and visualization of raw transient data generated by RadSim simulations, enabling the extraction of critical metrics such as Full-Width-Half-Max (FWHM) and peak voltage displacement (ΔV). A key feature of the software is its dual-method calculation capability, allowing for the analysis of both regular, single-peak waveforms and absolute (envelope) complex, multi-peak waveforms. Through the integration of automated waveform comparisons across variable Linear Energy Transfer (LET) conditions, SimPlot was utilized to identify vulnerability thresholds in radiation-hardened-by-design (RHBD) operational amplifiers (OpAmps). This automation significantly reduces analysis time, supporting the correlation of simulation results with experimental heavy-ion data to optimize transistor placement and circuit-level mitigation strategies
Simulating a Virtual Irradiator Using GEANT4
A Virtual Irradiator was modeled using Geant4 to simulate 10 GeV Iron-56 transport through silicon. Utilizing the QGSP_BERT physics list, energy deposition was analyzed to characterize the Bragg Peak at a depth of approximately 4.5 mm. Results confirmed 100% shielding effectiveness for a 1 cm silicon slab while identifying the worst-case depth for Single Event Upset (SEU) susceptibility in transistor placement.
